inchange semiconductor isc product specification isc silicon npn power transistor BU706F description collector-emitter sustaining voltage- : v ceo(sus) = 700v(min) high switching speed applications designed for use in horizontal defle ction circuits of color tv receivers and line operated switch-mode applications absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector- emitter voltage v be =0 1500 v v ceo collector-emitter voltage 700 v v ebo emitter-base voltage 6 v i c collector current-continuous 5 a i cm collector current-peak 8 a i b b base current-continuous 3 a i bm base current-peak 5 a p c collector power dissipation @ t c =25 32 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 3.95 /w rth j-a thermal resistance, junction to ambient 35 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU706F electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.1a ;i b = 0; l=25 mh b 700 v v ce (sat) collector-emitter saturation voltage i c = 3a; i b = 1.33a b 5.0 v v be (sat) base-emitter saturation voltage i c = 3a; i b = 1.33a b 1.3 v i ces collector cutoff current v ce = v cesmax ;v be = 0 v ce = v cesmax ;v be = 0; t j = 125 0.5 1.0 ma i ebo emitter cutoff current v eb = 6v; i c =0 10 ma h fe dc current gain i c = 3a; v ce = 5v 2.25 i s/b second breakdown current v ce = 300v; t p = 200 s 1.0 a switching times t f fall time 0.7 s t s storage time i c = 3a; i b( end ) = 1a; l b = 12 h 6.5 s isc website www.iscsemi.cn 2
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